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Temperature rise in InGaN/GaN vertical light emitting diode on copper transferred from silicon probed by Raman scattering

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7 Author(s)
Alarcon-Llado, Esther ; Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR), 3 Research Link, Singapore 117602 ; Bin-Dolmanan, Surani ; Lin, Vivian Kai Xin ; Teo, Siew Lang
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The authors report on a Raman scattering study of self-heating in InGaN/GaN-based thin film vertical light emitting diode (VLED) on copper successfully transferred from silicon (111). The LED structures grown on bulk Si are transferred to a copper substrate host using electroplating and sacrificial removal of silicon by grinding, lapping and dry etching. The light emission characteristics of such VLEDs are studied by electroluminescence measurements. Due to self-heating at very high injection current, the temperature of the p-side down VLED without encapsulation and packaging increases rapidly and correlates well with the I-V characteristics. The Raman measurements allow probing of temperature profiles when these VLEDs are driven at current up to 1 A.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 11 )

Date of Publication:

Dec 2010

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