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High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance

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3 Author(s)
W. Chen ; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, People's Republic of China ; C. Zhou ; K. J. Chen

A high-voltage normally-off AlGaN/GaN hybrid-gate HEMT (HG-HEMT) with high current-density and low on-resistance on Si substrate is fabricated. The proposed device features a hybrid-gate consisting of a short E-mode gate and a long D-mode gate. In the off-state, the short E-mode gate confirms the normally-off operation, while the D-mode gate can clamp the channel potential at a low drain voltage, which delivers high blocking capability. In the on-state, the short E-mode channel and the D-mode channel providing lower channel resistance facilitate high on-current or low on-resistance. Therefore, the HG-HEMT achieves a high breakdown voltage and low on-resistance simultaneously. Compared with the conventional device, the HG-HEMT is shown to deliver comparable breakdown voltage while featuring 62% lower on-resistance.

Published in:

Electronics Letters  (Volume:46 ,  Issue: 24 )