By Topic

High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Chen, W. ; State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China ; Zhou, C. ; Chen, K.J.

A high-voltage normally-off AlGaN/GaN hybrid-gate HEMT (HG-HEMT) with high current-density and low on-resistance on Si substrate is fabricated. The proposed device features a hybrid-gate consisting of a short E-mode gate and a long D-mode gate. In the off-state, the short E-mode gate confirms the normally-off operation, while the D-mode gate can clamp the channel potential at a low drain voltage, which delivers high blocking capability. In the on-state, the short E-mode channel and the D-mode channel providing lower channel resistance facilitate high on-current or low on-resistance. Therefore, the HG-HEMT achieves a high breakdown voltage and low on-resistance simultaneously. Compared with the conventional device, the HG-HEMT is shown to deliver comparable breakdown voltage while featuring 62% lower on-resistance.

Published in:

Electronics Letters  (Volume:46 ,  Issue: 24 )