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Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction

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7 Author(s)
Ma, N. ; State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People''s Republic of China ; Wang, X.Q. ; Xu, F.J. ; Tang, N.
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The p-type conduction in Mg-doped InN film is identified by an anomalous Hall mobility kink observed at ∼600 K in temperature-dependent Hall-effect measurements. The good agreement between experimental results and ensemble Monte Carlo simulation confirms the p-type bulk conduction under the surface electron accumulation layer. Furthermore, it is found that there is an exponential relationship between the hole concentration in the p-type bulk layer and the reciprocal kink temperature, which provides an effective way to evaluate the hole concentration in Mg-doped InN bulk layer through Hall-effect measurements.

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Applied Physics Letters  (Volume:97 ,  Issue: 22 )