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Two-Dimensional Analytical Model for Concentration Profiles of Aluminum Implanted Into 4H-SiC (0001)

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2 Author(s)
Mochizuki, K. ; R&D Partnership for Future Power Electron. Technol., Tokyo, Japan ; Yokoyama, N.

A 2-D model of aluminum-ion implantation into 4H-SiC (0001) was developed and assessed through reverse current IR-voltage VR characteristics of p-n diodes. The model was based on a Monte Carlo simulation using a binary-collision approximation. For a moderate dose (1011 - 1013 cm-2), simulated isoconcentration contours were independent of the orientation of the masking edge. This condition allowed us to extract lateral straggling by expressing the lateral-concentration profiles as a 1-D dual-Pearson distribution function multiplied by a Gaussian distribution function. To demonstrate its applicability to higher doses, the model was applied in the simulation of a 4H-SiC p-n diode whose anode was formed by a 4 × 1014 cm-2 aluminum implant into a moderately n-type doped (ND = 9 × 1015 cm-3) drift layer. The IR-VR characteristics calculated with the model were found to agree with the measured ones, suggesting that the developed model is appropriate for designing 4H-SiC power devices, including not only a p-type region with moderate aluminum implant but also a p-type region with a heavy aluminum implant on the condition that ND is sufficiently high.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 2 )