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Selection of Well Contact Densities for Latchup-Immune Minimal-Area ICs

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16 Author(s)
Dodds, N.A. ; Vanderbilt Univ., Nashville, TN, USA ; Hutson, J.M. ; Pellish, J.A. ; Reed, R.A.
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Heavy ion data for custom SRAMs fabricated in a 45-nm CMOS technology demonstrate the effects of N- and P-well contact densities on single-event latchup. Although scaling has improved latchup robustness, process-level immunity has not been achieved, indicating a continued need for latchup mitigation techniques. A simple, algorithmic approach for selecting N- and P-well contact densities is described that ensures latchup immunity while minimizing the area penalty.

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Nuclear Science, IEEE Transactions on  (Volume:57 ,  Issue: 6 )