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Radiation Studies of Power LDMOS Devices for High Energy Physics Applications

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6 Author(s)
Díez, S. ; Inst. de Microelectron. de Barcelona, CNM, Barcelona, Spain ; Ullan, M. ; Pellegrini, G. ; Lozano, M.
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We present radiation hardness studies performed on LDMOS devices included in a 0.25 μm SiGe BiCMOS technology from IHP Microelectronics. Results show degradation of devices performances only beyond 1 × 1015 neq/cm2.

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Nuclear Science, IEEE Transactions on  (Volume:57 ,  Issue: 6 )