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A Physics-Based Device Model of Transient Neutron Damage in Bipolar Junction Transistors

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4 Author(s)
Keiter, E.R. ; Sandia Nat. Labs., Albuquerque, NM, USA ; Russo, T.V. ; Hembree, C.E. ; Kambour, K.E.

For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, a bipolar junction transistor (BJT) compact model incorporating displacement damage effects and rapid annealing has been developed. A physics-based approach is used to model displacement damage effects, and this modeling approach is implemented as an augmentation to the Gummel-Poon BJT model. The model is presented and implemented in the Xyce circuit simulator, and is shown to agree well with experiments and TCAD simulation, and is shown to be superior to a previous compact modeling approach.

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Nuclear Science, IEEE Transactions on  (Volume:57 ,  Issue: 6 )