By Topic

Defect Interactions of {\hbox {H}}_{2} in {\hbox {SiO}}_{2} : Implications for ELDRS and Latent Interface Trap Buildup

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Tuttle, B.R. ; Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN, USA ; Hughart, D.R. ; Schrimpf, R.D. ; Fleetwood, D.M.
more authors

The energetics of the interactions between molecular hydrogen and common defects in SiO2 that are typically associated with O deficiency have been obtained using atomic-scale quantum mechanical calculations. H2 does not easily crack at neutral vacancies, but it will crack efficiently at O vacancy sites that have captured a hole and relaxed into the puckered configuration of an Eγ' defect, releasing a proton into the oxide. Isolated Si dangling bonds also can play a role in cracking H2, depending on their concentration in the oxides. These results provide significant insight into the underlying causes of latent interface trap buildup in MOS devices and enhanced low-dose-rate sensitivity in linear bipolar devices.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:57 ,  Issue: 6 )