Referenced Items are not available for this document.
An approach combining the SRAM-based field-programmable gate array static cross-section with the results of fault injection campaigns allows predicting the error rate of any implemented application. Experimental results issued from heavy ion tests are compared with predictions to validate the proposed methodology.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:57
,
Issue:
6
)
Date of Publication: Dec. 2010
- Page(s):
- 3500 - 3505
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 11692980
- Digital Object Identifier :
- 10.1109/TNS.2010.2087355
- Date of Current Version :
- 13 December 2010
- Issue Date :
- Dec. 2010
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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