By Topic

Silicon wafer preparation for low-temperature selective epitaxial growth

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Galewski, Carl ; California Univ., Berkeley, CA, USA ; Lou, Jen-Chung ; Oldham, William G.

Many potential selective silicon epitaxy applications demand low-temperature processing. However, the hydrogen baking that is commonly used to remove the native oxide before epitaxial deposition becomes less effective as the temperature is reduced. Therefore, making selective epitaxy manufacturable requires alternative oxide removal techniques that are reliable and noncontaminating. Exposure to the vapor over an aqueous solution of HF is investigated as a means of providing oxide-free and passivated-wafer surfaces prior to reactor loading. The dilution of the H2O:HF mixture is found to be important in determining the oxide removal rate. An oxygen peak at the substrate interface during SIMS (secondary ion mass spectrometry) profiling is an indicator of the presence of oxide patches that can cause defects at the initiation of epitaxial deposition. Defect-free films without an interface peak of oxygen are grown at 850°C after using a 5-s exposure to the vapor over a 1:2 H2O:49% HF mixture followed by a 900°C hydrogen bake. A hydrogen-bake temperature of 1050°C is needed in the reactor to avoid an interfacial oxygen peak for samples not exposed to the HF vapor

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:3 ,  Issue: 3 )