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Tuning the electron injection barrier between Co and C60 using Alq3 buffer layer

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6 Author(s)
Wang, Yu-Zhan ; Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 ; Qi, Dong-Chen ; Chen, Shi ; Mao, Hong-Ying
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We demonstrate that the electron injection barrier e) between Co and C60 can be tuned by inserting a thin Alq3 interlayer. Using ultraviolet photoemission spectroscopy, Δe of C60 on Alq3-predecorated Co e=0.3 eV) was found to be reduced by 0.3 eV compared with that of C60 deposited directly on the bare Co metal surface e=0.6 eV). Due to Fermi level pining at the Alq3/Co interface, this tuning effect is independent of the thickness of Alq3 interlayer from multilayer to monolayer. Based on the experimental results, band level alignment diagrams are proposed for C60/Co and C60/Alq3/Co interfaces with two different Alq3 thicknesses. Our findings could have potential applications for the reduction in the carrier injection barrier in organic spin valves.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 10 )

Date of Publication:

Nov 2010

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