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Effects of using As2 and As4 on the optical properties of InGaAs quantum rods grown by molecular beam epitaxy

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5 Author(s)
Li, L.H. ; School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom ; Patriarche, G. ; Linfield, E.H. ; Khanna, S.P.
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We investigate the effect of the arsenic source (As2 and As4) on the optical properties of InGaAs quantum rods (QRs) grown by molecular beam epitaxy. Owing to differences in the In and Ga diffusion lengths under As2 and As4 fluxes, photoluminescence (PL) peak energies of the QR samples depend strongly on the As source when similar growth conditions are used. A marked improvement in the PL intensities from QR samples grown using As4 is achieved. However, for both As2 and As4, an increase of the As overpressure results in a PL intensity degradation, probably due to the formation of nonradiative recombination centers.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 10 )