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Integration of block copolymer directed assembly with 193 immersion lithography

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7 Author(s)
Liu, Chi-Chun ; Department of Chemical and Biological Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706 ; Nealey, Paul F. ; Raub, Alex K. ; Hakeem, Philip J.
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An integration scheme of block copolymer directed assembly with 193 nm immersion lithography is presented. It is experimentally shown that a thin silicon nitride film can be used as an antireflective coating (ARC). With such an ARC, directed assembly of a block copolymer (BCP) to triple the feature density of a chemical pattern was demonstrated. A high quality of assembly was obtained over a large area, and pattern transfer feasibility was illustrated. The integration of feature density multiplication via directed assembly of a BCP with 193 nm immersion lithography provided a pattern quality that was comparable with existing double patterning techniques, suggesting that the process could be a promising candidate for extending the use of current 193 immersion lithography tools to higher pattern densities.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 6 )