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Sputtering of (001)AlN thin films: Control of polarity by a seed layer

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9 Author(s)
Milyutin, E. ; Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne 1015, Switzerland ; Harada, S. ; Martin, D. ; Carlin, J. F.
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The authors report on the ability to control the polarity of sputter deposited AlN(001) thin films using seed layers. Reactive sputter deposition leads to N-polarity on any substrate hitherto applied, i.e., Si(111), sapphire, SiO2, and polycrystalline metals such as Pt(111), Mo(110), and W(110). A site-controlled polarity allows for an efficient excitation of shear modes of surface, bulk, and Lamb waves by interdigitated electrodes. The authors were able to introduce the Al-polarity through a metal-organic chemical-vapor deposition seed layer. By subsequently patterning the substrate surface, it was possible to define the desired film polarity of sputter deposited AlN film. Polarities were determined by selective etching with KOH solutions and by piezoresponse force microscopy.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 6 )