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New carrier drift mobility data for boron-, phosphorus-, and arsenic-doped Si in a low-energy high-dose implant regime are measured and studied using a continuous anodic oxidation technique/differential Hall effect technique. The data show that, when the doping concentration is >; 1020/cm3, both the hole and electron mobility values are lower than the conventional model predictions, and the electron mobility of the As-doped Si is lower than that of the P-doped ones. The data also show that, when the doping concentration is >; 1021/cm3 the hole mobility in the B-doped Si and the electron mobility in the P-doped Si are almost equal and reach as low as ~40 cm2/V · s, and the electron mobility of the As-doped Si is the lowest and reaches ~30 cm2/V · s. These mobility data are much lower than the conventional model predictions and are also lower than the previously published data. For the ULSI device and circuit analyses, simulations, and designs, these new mobility data need to be taken into consideration.