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Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 \mu m

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5 Author(s)
Baile Chen ; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville ; W. Y. Jiang ; Jinrong Yuan ; Archie L. Holmes
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An InP-based p-i-n photodiode with optical response out to 3.4 μm was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nm In0.34Ga0.66As/5-nm GaAs0.25Sb0.75 quantum wells strain compensated to InP were used as the absorption region. The device showed a dark current density of 9.6 mA/cm2 under -0.5-V reverse bias, a responsivity of 0.03 A/W, and a detectivity of 2.0 × 108 cm·Hz1/2·W-1 at 3 μm at 290 K.

Published in:

IEEE Photonics Technology Letters  (Volume:23 ,  Issue: 4 )