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Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As

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3 Author(s)
Endo, M. ; Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan ; Matsukura, F. ; Ohno, H.

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The authors investigate the current density and temperature dependence of current induced effective magnetic field Heff through spin-orbit interaction in a ferromagnetic semiconductor Ga0.92Mn0.08As having uniaxial magnetic anisotropy. The change of the magnitude of apparent magnetic anisotropy induced by Heff that is dependent on the current direction and density is observed by transport measurements using the planar Hall effect. The authors show the 180° magnetization switching through Heff by applying pulsed current.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 22 )