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Room temperature luminescence and 1 /spl mu/m junction laser operation of In/sub x/Ga/sub 1-x/As/GaAs quantum boxes formed by self-organized molecular beam

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5 Author(s)
Phillips, J. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Kamath, K. ; Sosnowski, T. ; Norris, T.
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We report here the observation of strong room temperature photoluminescence (PL) and junction laser operation (/spl lambda/=1 /spl mu/m) from self-organized InGaAs quantum dots grown by molecular beam epitaxy (MBE) on [001] GaAs substrates.

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE  (Volume:1 )

Date of Conference:

18-21 Nov. 1996