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Single-electron memory based on floating-gated carbon nanotube field-effect transistors

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5 Author(s)
Ohori, Takahiro ; Inst. of Sci. & Ind. Res., Osaka Univ., Osaka, Japan ; Ohno, Yasuhide ; Maehashi, Kenzo ; Inoue, Koichi
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We have fabricated floating-gated carbon nanotube field-effect transistors (CNTFETs). Au floating dots in the device are expected to act as charge storage nodes. The fabricated floating-gated CNTFETs clearly exhibited memory effect. Furthermore, single-electron memory was demonstrated based on floating-gated CNTFETs. Quantized shifts in the threshold voltage as a function of charging voltage and retention time were clearly observed. The quantized characteristics are attributed to the effect of single hole charging in the Au floating dots.

Published in:

Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE

Date of Conference:

12-15 Oct. 2010