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Current-voltage model in depletion all around operation of InSb nanowire field effect transistor

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3 Author(s)
Jahangir, I. ; Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh ; Jahangir, S. ; Khosru, Q.D.M.

In this work, a numerical model of quantum transport in depletion-all-around (DAA) operation of n-InSb nanowire field effect transistor (NWFET) is developed. For incorporating quantum transport, 2D Poisson-Schrödinger equations are solved by finite element method and drain current is calculated by mode-space approach. Effects of gate and drain bias voltages and device dimensions on current-voltage characteristics are observed.

Published in:

Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE

Date of Conference:

12-15 Oct. 2010