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We demonstrated high-performance complementary voltage inverters based on top-gated carbon nanotube field-effect transistors (CNTFETs) with SiNx passivation films. The carrier type of CNTFETs was controlled by forming condition of SiNx passivation films. Complementary voltage inverters comprising p- and n-type CNTFETs were fabricated on the same SiO2 substrate. The static transfer and noise margin characteristics of the CNTFET based inverters were investigated. It was found that a gain of approximately 24 was achieved and that the device was robust against noise.