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Fabrication of high-performance voltage inverters based on carbon nanotube field-effect transistors

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5 Author(s)
Kenzo Maehashi ; Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan ; Takaomi Kishimoto ; Yasuhide Ohno ; Koichi Inoue
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We demonstrated high-performance complementary voltage inverters based on top-gated carbon nanotube field-effect transistors (CNTFETs) with SiNx passivation films. The carrier type of CNTFETs was controlled by forming condition of SiNx passivation films. Complementary voltage inverters comprising p- and n-type CNTFETs were fabricated on the same SiO2 substrate. The static transfer and noise margin characteristics of the CNTFET based inverters were investigated. It was found that a gain of approximately 24 was achieved and that the device was robust against noise.

Published in:

Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE

Date of Conference:

12-15 Oct. 2010