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Low series resistance OMVPE grown 850 nm vertical-cavity surface-emitting lasers on p-type GaAs substrates

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2 Author(s)
Lei, C. ; Div. of Opt. Commun., Hewlett-Packard Co., San Jose, CA, USA ; Hodge, L.A.

In summary, we have demonstrated high performance 850 nm GaAs DBR QW VCSELs on p-type substrates with low series resistance of 17 ohms for 22 /spl mu/m implant diameters. The current spreading can be reduced by optimizing the doping profile above the active region. Both n-side-up and p-side-up VCSELs show comparable speed response of 1.5 Gbps.

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE  (Volume:1 )

Date of Conference:

18-21 Nov. 1996