By Topic

High efficiency 1.3 μm strained multi-quantum well lasers entirely grown by MOVPE for passive optical network use

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
T. Nakamura ; KANSAI Electron. Res. Lab., NEC Corp., Otsu, Japan ; K. Tsuruoka ; K. Fukushima ; A. Uda
more authors

A high efficiency of 0.4 W/A at 85°C, the highest ever reported for InGaAsP MQW-LDs entirely grown by MOVPE, was realized. The efficiency change was a low 2.5 dB over -40 to +85°C for a surface-mount module

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE  (Volume:1 )

Date of Conference:

18-19 Nov 1996