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The thermal spike model which takes into account both ionization and nuclear energy loss processes of the projectile as distinct electronic and atomic heat sources is used to describe transient processes induced by ions in silicon. The time and space dependencies of the lattice and electron temperatures near the projectile trajectory are calculated. The contribution of the rise in temperature on defect formation and annealing is considered.
Semiconductor Conference (CAS), 2010 International (Volume:02 )
Date of Conference: 11-13 Oct. 2010