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Photocapacitance relaxation and rigidity transition in GexAsxSe1−2x amorphous films

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3 Author(s)
I. A. Vasiliev ; Institute of Applied Physics, Academy of Sciences of Moldova, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova ; M. S. Iovu ; E. P. Colomeiko

The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25 and 0.30. Compositional dependencies of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are deduced from these data. All parameters show two compositional thresholds, one situated near the xc(1)=0.09, and another - near the xc(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method (P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).

Published in:

CAS 2010 Proceedings (International Semiconductor Conference)  (Volume:02 )

Date of Conference:

11-13 Oct. 2010