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Photocapacitance relaxation and rigidity transition in GexAsxSe1−2x amorphous films

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3 Author(s)
Vasiliev, I.A. ; Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova ; Iovu, M.S. ; Colomeiko, E.P.

The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25 and 0.30. Compositional dependencies of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are deduced from these data. All parameters show two compositional thresholds, one situated near the xc(1)=0.09, and another - near the xc(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method (P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).

Published in:

Semiconductor Conference (CAS), 2010 International  (Volume:02 )

Date of Conference:

11-13 Oct. 2010

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