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Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric

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7 Author(s)
Shahrjerdi, D. ; Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA ; Nah, J. ; Hekmatshoar, B. ; Akyol, T.
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We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars. The Hall data reveal the existence of a reduced mobile charge density in the channel due to significant charge trapping. The peak electron mobility was found to be relatively high (∼2140 cm2/Vs), in agreement with inherent high carrier mobility of electrons in III-V materials.

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Applied Physics Letters  (Volume:97 ,  Issue: 21 )