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Charge trapping in thin SiO2 layers: application to the breakdown of MOS

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1 Author(s)
Blaise, G. ; Lab. de Phys. des Solides, Univ. de Paris-Sud, Orsay, France

Positive and negative charging is commonly observed in thin SiO 2 layers subjected to high electric fields. Under Fowler-Nordheim electron injection that requires fields exceeding 7 MV/cm, positive charging is formed, whereas negative charging is produced at lower fields. In both cases breakdown is obtained after the injection of a critical amount of charges QBD, called “charge to breakdown”. Positive and negative charging induced breakdown is interpreted on the basis of the polarization/relaxation process developed to interpret breakdown in high voltage capacitors. In agreement with experiments, it is demonstrated that negative charging induced breakdown is due to the detrapping of a critical density of electrons. The consequence is that QBD is roughly constant when the current density J is less than a critical value Jc and decreases very rapidly when J>Jc. When positive charging is formed, breakdown is attributed to the neutralization of positive charges by the injected electrons. In this case breakdown occurs when the product J×Nc+ (where Nc+ is the density of positive trapped charges) reaches a critical value. The charge to breakdown QBD decreases with J according to an expression of the form Q BDαexpJ0/J where J0 is an appropriate parameter characteristic of the dielectric material

Published in:

Electrical Insulation and Dielectric Phenomena, 1996., IEEE 1996 Annual Report of the Conference on  (Volume:1 )

Date of Conference:

20-23 Oct 1996