By Topic

Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Wang, Jiaxing ; Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084, People''s Republic of China ; Wang, Lai ; Zhao, Wei ; Hao, Zhibiao
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3520139 

Two light-emitting diode samples are grown with InGaN and GaN underlying layers beneath the multiple quantum wells (MQWs), respectively. By measuring the carrier lifetime as a function of photon energy, it is found that the MQW with InGaN underlying layer has a higher degree of carrier localization. Comparison between the external quantum efficiency and injection current of these two samples reveals that efficiency droop at small injection current is attributed to the delocalization of carriers, while further droop at a higher injection current is due mostly to the carrier leakage demonstrated through temperature-dependent electroluminescence measurements.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 20 )