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We fabricated and characterized a low thermal conductance (G) transition edge sensor (TES). The device is based on a superconducting Ti/Au bilayer deposited on a suspended SiN membrane. The critical temperature of the device is 155 mK. The low thermal conductance is realized by using narrow SiN ring-like supporting structures. All measurements were performed having the device in a light-tight box, which to a great extent eliminates the loading of the background radiation. We measured the current-voltage (IV) characteristics of the device in different bath temperatures and determine the thermal conductance (G) to be equal to 1.66 pW/K. This value corresponds to a noise equivalent power (NEP) of 1×10-18 W/√Hz. The current noise and complex impedance are also measured at different bias points at 25 mK bath temperature. The measured electrical (dark) NEP is 2×10-18 W/√Hz, which is about a factor of 2 higher than what is expected from the thermal conductance that comes out of the IV curves analysis. We also measured the complex impedance of the same device at several bias points. Fitting a simple first order thermal-electrical model to the measured data, we find an effective time constant of about 62 μs and a thermal capacity of 3 fJ/K.