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Monolithic Ge-on-Si lasers for integrated photonics

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6 Author(s)
Jifeng Liu ; Microphotonics Center, Massachusetts Inst. of Technol., Cambridge, MA, USA ; Sun, Xiaochen ; Camacho-Aguilera, R. ; Yan Cai
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We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility of electrically pumped lasers.

Published in:

Group IV Photonics (GFP), 2010 7th IEEE International Conference on

Date of Conference:

1-3 Sept. 2010