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Upper limit for the amplifiable Stokes power in saturated silicon waveguide Raman amplifiers

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1 Author(s)
Renner, H. ; Tech. Univ. Hamburg-Harburg, Hamburg, Germany

We derive upper limits for the amplifiable Stokes power in saturated silicon Raman amplifiers and the tolerable product of scattering-loss and FCA coefficients. Optimal pump conditions are given analytically and optimized amplifier designs are presented.

Published in:
Group IV Photonics (GFP), 2010 7th IEEE International Conference on

Date of Conference: 1-3 Sept. 2010

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