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Mach-Zehnder silicon modulator on bulk silicon substrate; toward DRAM optical interface

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15 Author(s)
Shin, D.J. ; Image Archit. Lab., Samsung Electron., Yongin, South Korea ; Lee, K.H. ; Ji, H.-C. ; Na, K.W.
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We present a Mach-Zehnder silicon modulator fabricated on a bulk silicon substrate featuring active length of 200 μm, modulation speed up to 5 Gb/s, power consumption of 2 pJ/bit, and extinction ratio of 10 dB.

Published in:

Group IV Photonics (GFP), 2010 7th IEEE International Conference on

Date of Conference:

1-3 Sept. 2010