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Development of p-type microcrystalline silicon-carbon alloy thin film at low power and its application in tunnel junctions [solar cells]

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3 Author(s)
Ray, S. ; Energy Res. Unit, Indian Assoc. for the Cultivation of Sci., Calcutta, India ; Desgupta, A. ; Barua, A.K.

Wide band gap anti-highly conducting p-type microcrystalline silicon carbide (μc-SiC:H) thin films have been prepared at low power (39 mW/cm2) by a conventional RF-PECVD technique. The dark conductivity of the films varies from 8-0.11 S cm-1 whereas the E04 value varies from 1.95-2.35 eV, for different carbon incorporations. These films have been applied in an incomplete double junction solar cell structure, viz. glass/TCO/p/i/n+/p+ /Al to study the tunneling effect

Published in:

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Date of Conference:

13-17 May 1996