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Reaction analysis of the formation of CIS at temperatures from 250 to 400°C

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4 Author(s)
Orbey, N. ; Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA ; Hichri, H. ; Birkmire, R.W. ; Russell, T.W.F.

A chemical reaction analysis of the selenization of copper indium layers to form copper indium diselenide is presented. Time progressive selenizations were carried out in a tubular laminar flow reactor in a dilute H2Se atmosphere at 250, 325 and 400°C. The reacted films were analyzed by X-ray diffraction and atomic absorption spectroscopy. The chemical species present in the reacted films were identified and a reaction network for film formation is proposed. The data from time progressive selenizations were analyzed to obtain species concentration profiles. Rate expressions were postulated and a mathematical model for the selenization was developed. The behavior of the model is compared with the experimentally determined species concentrations to obtain specific reaction rate constants at each temperature and the activation energies. This information is needed for the design and process control of commercial scale selenization reactors

Published in:

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Date of Conference:

13-17 May 1996