Scheduled Maintenance on April 29th, 2016:
IEEE Xplore will be unavailable for approximately 1 hour starting at 11:30 AM EDT. We apologize for the inconvenience.
By Topic

Stacked Anodized Metal Substrate for high thermal dissipation performance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chang-Hyun Lim ; Samsung Electro-Mechanics Co., LTD., 314, Maetan-Dong, Yeongtong-Gu, Suwon, Gyunggi-Do, Korea ; Young-Ki Lee ; Ki-Ho Seo ; Jong-Woon Kim
more authors

A novel fabrication method for stacking metal substrates using AMS (Anodized Metal Substrate) is suggested. This stacking technology can meet needs about superior heat dissipation capabilities for multi layer substrate in some application fields like automobile electronics applications. Moreover conventional processes which have been used for normal PCB (Printed Circuit Board) process and any special processes are not adopted for it. Therefore stacked structure over 4 layers using AMS can be realized by low cost. The realized stacked substrate is applied to automobile ISM (Image Sensor Module). The maximum temperature difference between surface of the hottest point of AMS and organic PCB reach about 10 °C. Through decrease of temperature of the hottest part, various components on the substrate can be protected from excessive heat. Therefore reliability and performance of module can be improved drastically.

Published in:

Electronic System-Integration Technology Conference (ESTC), 2010 3rd

Date of Conference:

13-16 Sept. 2010