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In this paper, the application of electron backscatter diffraction (EBSD) methods to materials used for common microelectronic interconnection technologies is demonstrated with particular emphasis to lead-free soldered interfaces and thermosonic wire bond interconnects. Here, the paper focuses on the quantitative analysis of grain orientation, grain size and grain distribution of SAC as well as gold, aluminum and copper bonding wire materials. In addition special attention is paid to high resolution analysis of the intermetallics formed in the interfaces of microelectronic packaging interconnects. The application and the potential of EBSD to detect the Cu/Sn, Ni/Sn and Au/Al intermetallics being practically relevant for soldering and wire bonding is demonstrated.