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Thermal behavior of 1.55 µm (100) InAs/InP-based quantum dot lasers

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6 Author(s)
Sayid A. Sayid ; Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK ; Igor P. Marko ; Alfred R. Adams ; Stephen J. Sweeney
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Unlike InAs/GaAs quantum dot lasers, in 1.55μm InAs/InP devices, non-radiative recombination dominates device behavior from very low temperature (~40K) and accounts for ~94% of Jth at room temperature with a To of ~72K from 220K-290K.

Published in:

22nd IEEE International Semiconductor Laser Conference

Date of Conference:

26-30 Sept. 2010