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Thermal behavior of 1.55 µm (100) InAs/InP-based quantum dot lasers

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6 Author(s)
Sayid, Sayid A. ; Dept. of Phys., Univ. of Surrey, Guildford, UK ; Marko, I.P. ; Adams, A.R. ; Sweeney, S.J.
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Unlike InAs/GaAs quantum dot lasers, in 1.55μm InAs/InP devices, non-radiative recombination dominates device behavior from very low temperature (~40K) and accounts for ~94% of Jth at room temperature with a To of ~72K from 220K-290K.

Published in:

Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International

Date of Conference:

26-30 Sept. 2010

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