Close category search window
 

Design and feasibility of multi-Gb/s quasi-serial vertical interconnects based on TSVs for 3D ICs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Fengda Sun ; Microelectron. Syst. Lab., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland ; Cevrero, A. ; Athanasopoulos, P. ; Leblebici, Y.

This paper proposes a novel technique to exploit the high bandwidth offered by through silicon vias (TSVs). In the proposed approach, synchronous parallel 3D links are replaced by serialized links to save silicon area and increase yield. Detailed analysis conducted in 90 nm CMOS technology shows that the proposed 2-Gb/s/pin quasi-serial link requires approximately five times less area than its parallel bus equivalent at same data rate for a TSV diameter of 20 μm.

Published in:
VLSI System on Chip Conference (VLSI-SoC), 2010 18th IEEE/IFIP

Date of Conference: 27-29 Sept. 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.