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Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method

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4 Author(s)
Furong Zhu ; Dept. of Electr. Eng., Kyoto Univ., Japan ; Kohara, H. ; Fuyuki, T. ; Matsunami, Hiroyuki

Polycrystalline silicon (Si) films for solar cells have been deposited on both Si and foreign substrates by the plasma enhanced chemical vapour deposition (PECVD) method. Structural properties of Si films were characterised by X-ray diffraction (XRD) and Raman scattering measurements. Optical constants of Si films were calculated using the optical admittance method. The crystallinity of the films at different temperatures is investigated. Results reveal that over 90% of the Si was in a polycrystalline structure in the films when the deposition temperature was over 800°C

Published in:

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Date of Conference:

13-17 May 1996