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TDDB and Pulse-Breakdown Studies of Si-Rich  \hbox {SiN}_{x} Antifuses and Antifuse-Based ROMs

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5 Author(s)
Kaplar, R.J. ; Microelectron. Dev. Lab., Sandia Nat. Labs., Albuquerque, NM, USA ; Habermehl, S.D. ; Apodaca, R.T. ; Havener, B.
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Antifuses are electronic devices that can be irreversibly converted from a high-resistance state to a low-resistance state. Thus, they are ideal candidates for one-time-programmable many-times-readable nonvolatile memories. In this paper, the reliability and the programming characteristics of Si-rich SiNx, antifuses have been studied using time-dependent dielectric breakdown and pulse-breakdown measurements on both single-device test structures and full read-only memories. Contrary to measurements on thick films in which the Poole-Frenkel barrier lowering dominates breakdown, these measurements on fully processed and integrated antifuses indicate that a Fowler-Nordheim-like mechanism governs both programming and long-term reliability.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 1 )