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Novel characterization of fully-depleted GeOI pMOSFET by magnetoresistance

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5 Author(s)
Van Den Daele, W. ; IMEP-LAHC, Minatec Grenoble-INP, Grenoble, France ; Le Royer, C. ; Augendre, E. ; Ghibaudo, G.
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Hole mobility in fully-depleted GeOI pMOSFETs is determined and analyzed using for the first time the geometric magnetoresistance technique. The temperature dependent measurements clarify the scattering mechanisms. A significant difference between effective mobility and magnetoresistance mobility is found. Unlike the SOI nMOSFET, this ratio (rMR ≃ 1.8) is rather independent on the temperature and inversion charge pointing out special scattering mechanisms.

Published in:
SOI Conference (SOI), 2010 IEEE International

Date of Conference: 11-14 Oct. 2010

Page(s):
1 - 2
ISSN :
1078-621x
E-ISBN :
978-1-4244-9128-5
Print ISBN:
978-1-4244-9130-8
INSPEC Accession Number:
11656715
Conference Location :
San Diego, CA
Digital Object Identifier :
10.1109/SOI.2010.5641398
Product Type:
Conference Publications

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