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Hole mobility in fully-depleted GeOI pMOSFETs is determined and analyzed using for the first time the geometric magnetoresistance technique. The temperature dependent measurements clarify the scattering mechanisms. A significant difference between effective mobility and magnetoresistance mobility is found. Unlike the SOI nMOSFET, this ratio (rMR ≃ 1.8) is rather independent on the temperature and inversion charge pointing out special scattering mechanisms.
SOI Conference (SOI), 2010 IEEE International
Date of Conference: 11-14 Oct. 2010