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A metrology of silicon film thermal conductivity using micro-Raman spectroscopy

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3 Author(s)
Liu, Xi ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Xiaoming Wu ; Tianling Ren

We present a steady state technique enhanced with micro-Raman spectroscopy to measure thermal conductivity of SOI silicon device layer. This metrology, comparing to conventional technique based on thermistor, exhibits two improvements: robustness against ambient disturbance, which leads to an error of 28%, and reduction on measurement system error from 20% to 10%.

Published in:

SOI Conference (SOI), 2010 IEEE International

Date of Conference:

11-14 Oct. 2010