Referenced Items are not available for this document.
In this paper, we propose disruptive circuit design techniques for ultra-low-power (ULP) medical sensor implants. They use unique CMOS blocks to build ULP diodes and transistors that are implemented with ultra-low-Vt devices in 0.15μm fully-depleted SOI CMOS, without process modification. Using these techniques, we propose a highly-efficient power-management unit and a 1.1μW interface for capacitive sensors.
Published in:
SOI Conference (SOI), 2010 IEEE International
Date of Conference: 11-14 Oct. 2010
- Page(s):
- 1 - 2
- ISSN :
- 1078-621x
- E-ISBN :
- 978-1-4244-9128-5
- Print ISBN:
- 978-1-4244-9130-8
- INSPEC Accession Number:
- 11663296
- Conference Location :
- San Diego, CA
- Digital Object Identifier :
- 10.1109/SOI.2010.5641370
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
