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Ultra low power, harsh environment SOI-CMOS design of temperature sensor based threshold detection and wake-up IC

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4 Author(s)
M. Assaad ; ICTEAM Institute, Université Catholique de Louvain, Louvain-La-Neuve, Belgium ; P. Gérard ; L. A. Francis ; D. Flandre

An ultra-low-power temperature-sensor-based silicon-on-insulator (SOI) CMOS Integrated Circuit (IC) for harsh environment application is presented. It first detects a temperature threshold, secondly generates a wake-up signal that turns on a data-acquisition microprocessor once the threshold has been detected and thirdly operates as a temperature sensor in a harsh environment while being wired to the microprocessor kept in a safe area. The IC is continuously on for a very long period of time and is required to be powered from a ultrathin battery type, hence must be an ultra low power design. It includes a diode-based temperature sensor, a quasi-temperature independent voltage generator, a comparator and a power switch to limit the microprocessor stand-by consumption. Since our application is mainly for harsh environment (e.g. high temperature, radiation), the chip has been designed using the 1-μm high-temperature SOI-CMOS XFAB technology; it occupies an area of 560μmxl65μm. The biasing current and power dissipation are 4.12 μA and 20.6 μW respectively at a supply voltage of 5V and temperature of 27°C, according to the post-layout transistor level simulation results.

Published in:

SOI Conference (SOI), 2010 IEEE International

Date of Conference:

11-14 Oct. 2010