Referenced Items are not available for this document.
We fabricated and characterized hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with a channel length of 10 on both spherical and flat surfaces using maskless laser-write lithography (LWL). In addition to the electrical performance, the threshold voltage shift of the a-Si:H TFT under bias-temperature stress is investigated and discussed in comparison to a device fabricated on a flat surface. The obtained results show that the a-Si:H TFTs fabricated by LWL method on a curved surface are suitable for pixel switches and circuits, which are needed to realize image sensor arrays and/or displays on a nonplanar surface.
Published in:
Electron Devices, IEEE Transactions on
(Volume:58
,
Issue:
1
)
Date of Publication: Jan. 2011
- Page(s):
- 160 - 164
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 11746868
- Digital Object Identifier :
- 10.1109/TED.2010.2088403
- Product Type:
- Journals & Magazines
- Date of Publication :
- 18 November 2010
- Date of Current Version :
- 23 December 2010
- Issue Date :
- Jan. 2011
- Sponsored by :
- IEEE Electron Devices Society
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