By Topic

Theoretical Calculation of the Magnetic Resonance Frequency of the Electron Spin Embedded Inside a Silicon Host for Solid-State Quantum Computing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hon Tat Hui ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Mirzaei, H.

The electron-spin magnetic resonance frequency of an electron-spin qubit structure that is proposed for the realization of a quantum computer is rigorously determined by a numerical method. The potential distribution inside the silicon qubit structure is accurately calculated by an electromagnetic simulation method, and the perturbation theory to the second order is formulated to obtain the magnetic resonance frequency of a phosphorus donor electron spin. Our results showed that, for the same qubit structure (Si:P), as originally proposed by Kane for a nuclear-spin qubit quantum computer, a smaller static magnetic field B is in favor of producing a wider tunable bandwidth for the magnetic resonance frequency of the electron spin. Our results also reveal that the use of SiGe as an alternative insulation material to the A-gate structure can improve the control efficiency of the A-gate voltage.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 2 )