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Crystal-orientation dependence of surface recombination velocity for silicon nitride passivated silicon wafers

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4 Author(s)
F. M. Schuurmans ; Netherlands Energy Res. Found., Petten, Netherlands ; A. Schonecker ; J. A. Eikelboom ; W. C. Sinke

The crystal-orientation dependence of the surface recombination velocity for silicon nitride coated silicon wafers is investigated and compared with thermal oxides. A qualitative very similar orientation dependence of Seff,d(Δn) for thermal oxide and PECVD nitride coated p-Si wafers etched in diluted HF is found with Seff,d(Δn) (100)<(110)<(111). The type of HF-etch (diluted or buffered HF) prior to deposition has a large influence on S eff,d for the nitride coated p-Si wafers. For the nitride coated n-Si wafers etched in diluted HF no orientation dependence of S eff,d is observed

Published in:

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Date of Conference:

13-17 May 1996