Referenced Items are not available for this document.
The crystal-orientation dependence of the surface recombination velocity for silicon nitride coated silicon wafers is investigated and compared with thermal oxides. A qualitative very similar orientation dependence of Seff,d(Δn) for thermal oxide and PECVD nitride coated p-Si wafers etched in diluted HF is found with Seff,d(Δn) (100)<(110)<(111). The type of HF-etch (diluted or buffered HF) prior to deposition has a large influence on S eff,d for the nitride coated p-Si wafers. For the nitride coated n-Si wafers etched in diluted HF no orientation dependence of S eff,d is observed
Published in:
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Date of Conference: 13-17 May 1996
- Page(s):
- 485 - 488
- Meeting Date :
- 13 May 1996-17 May 1996
- ISSN :
- 0160-8371
- Print ISBN:
- 0-7803-3166-4
- INSPEC Accession Number:
- 5526759
- Conference Location :
- Washington, DC
- Digital Object Identifier :
- 10.1109/PVSC.1996.564049
- Product Type:
- Conference Publications
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