Simulation and Analysis of InGaAs Power MOSFET Performances and Reliability

The new approach of implementing a laterally diffused metal-oxide-semiconductor (LDMOS) with In
_0.53
Ga
_0.47
As is investigated. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using 2-D device simulation. Comparisons are made between In
_0.53
Ga
_0.47
As and Si LDMOS, showcasing the advantages of In
_0.53
Ga
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As LDMOS. Further ON-state analysis of the In
_0.53
Ga
_0.47
As LDMOS is then provided with a proposed enhanced structure that demonstrates excellent I-V characteristics.