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AlGaInP LEDs Prepared by Contact-Transferred and Mask-Embedded Lithography

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8 Author(s)
H. M. Lo ; Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan ; Y. T. Hsieh ; S. C. Shei ; Y. C. Lee
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The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of AlGaInP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.39, 2.29, 2.39, 2.24, 2.21, and 2.25-V while the 20 mA output powers were 1.43, 1.42, 1.38, 1.35, 1.28, 1.22, and 1.16 mW for CMEL-400-nm LED, CMEL-600-nm LED, CMEL-800-nm LED, CMEL-1-μm LED, CMEL-2-μm LED, CMEL-3-μm, and the conventional LED without CMEL, respectively.

Published in:

IEEE Journal of Quantum Electronics  (Volume:46 ,  Issue: 12 )