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Patterned Quantum Dot Molecule Laser Fabricated by Electron Beam Lithography and Wet Chemical Etching

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6 Author(s)
Verma, V.B. ; Nat. Inst. of Stand. & Technol., Boulder, CO, USA ; Reddy, U. ; Dias, N.L. ; Bassett, K.P.
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We report on the fabrication and characterization of an edge-emitting semiconductor laser with a gain medium consisting of two layers of patterned, self-aligned, vertically coupled quantum dots (QDs) using a wet-etching and regrowth technique. A threshold current density of 300 A/cm2 is demonstrated at 77 K. The presence of emission from QD excited states in both the spontaneous emission and laser spectra indicates 3-D quantum confinement in QDs fabricated using this technique.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:46 ,  Issue: 12 )

Date of Publication:

Dec. 2010

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